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2.

Difference between triode and MOS:
1. Working property: triode is controlled by current, MOS is controlled by voltage

2. Cost: triode is cheap, MOS is expensive

3, power consumption problem: triode loss is large, MOS transistor is small

Driving ability: MOSFET is often used for power switch and high current local switch circuit

extended data:

proct parameters

characteristic frequency

when f = FT, the triode completely loses the current amplification function. If the working frequency is greater than ft, the circuit will not work normally

ft is called gain bandwidth proct, or ft= β fo If the operating frequency fo and high frequency current amplification factor of the current triode are known, the characteristic frequency ft can be obtained. As the operating frequency increases, the magnification will decrease. Ft can also be defined as β= 1

voltage / current

use this parameter to specify the voltage and current range of the transistor

HFE

current magnification

Vceo

Collector Emitter reverse breakdown voltage, which represents the saturation voltage at critical saturation

PCM

maximum allowable dissipative power.

packaging form

specifies the appearance shape of the tube. If other parameters are correct, different packaging will lead to the failure of the mole on the circuit board

working state

cut off state

when the voltage applied to the emitter junction of the triode is less than the on voltage of the PN junction, the base current is zero, and the collector current and emitter current are both zero. At this time, the triode loses the current amplification function, and the collector and emitter are in the off state, which is equivalent to the off state of the switch

amplification state

when the voltage applied to the emitter junction of the triode is greater than the on voltage of the PN junction and is at a proper value, the emitter junction of the triode is biased in the forward direction and the collector junction is biased in the reverse direction. At this time, the base current controls the collector current, which makes the triode have the function of current amplification, and the current amplification factor is increased β=Δ Ic/ Δ IB, then the triode is in the amplification state

When the voltage applied to the emitter junction is greater than that of the PN junction, and when the base current increases to a certain extent, the collector current no longer increases with the increase of the base current, but does not change much near a certain value. At this time, the triode loses its current amplification effect, and the voltage between the collector and emitter is very small, Between the collector and the emitter is equivalent to the on state of the switch

The state of

triode is called saturated conction state

according to the potential of each electrode when the triode is working, the working state of the triode can be judged. Therefore, in the process of maintenance, electronic maintenance personnel often need to take a multi-purpose meter to measure the voltage of each pin of the triode, so as to judge the working condition and working state of the triode

source of reference: network transistor

source of reference: network MOS transistor

3.

Definition of transconctance: the ratio of drain current variation to gate source voltage variation is called transconctance. Transconctance can be expressed as GM:

GM = △ ID / △ UGS

The unit of transconctance is s (West), which is the reciprocal of ohm, i.e. 1s = 1/ Ω

this definition is applicable to any voltage controlled amplifier, such as electron tube (vacuum triode), field effect transistor, etc

click the picture to enlarge:

the proct of transconctance and drain resistance is equal to the no-load voltage amplification factor (no-load voltage gain coefficient) of the common source amplifier

4. 1. Working property: triode is controlled by current, MOS is controlled by voltage,
2. Cost problem: triode is cheap, MOS is expensive
3. Power consumption: the triode has a large loss< Driving ability: MOSFET is often used for power switch and high current local switch circuit
in fact, triode is relatively cheap and convenient to use, which is commonly used in digital circuit switch control
MOS transistors are used in high-frequency and high-speed circuits, high current applications, and places sensitive to base or drain control current
generally speaking, for low-cost applications, triode should be considered first, otherwise MOS should be considered.
in fact, it is wrong to say that current control is slow and voltage control is fast. It is necessary to understand the working mode of bipolar transistor and
MOS transistor. The triode works by the movement of the carrier. Taking the emitter follower of NPN transistor as an example, when the base is applied with or without voltage, the PN junction composed of the base and the emitter is to prevent the diffusion movement of the multi carrier (the base is a hole and the emitter is an electron). At this PN junction, the electrostatic field (built-in electric field) from the emitter to the base will be inced, When the base applied positive voltage points to the emission region and the electric field generated by the base applied voltage is greater than the internal
built-up electric field, the carriers (electrons) in the base region can flow from the base region to the emission region. The minimum value of this voltage is the forward conction voltage of PN junction
which is generally considered to be 0.7V in engineering. But at this time, there are charges on both sides of each PN junction. If a positive voltage is applied to the collector emitter, the electrons in the emission region will move to the base region under the action of the electric field (in fact, they all move in the opposite direction of the electrons). Because the width of the base region is very small, the electrons can easily cross the base region and reach the collector region, and compound with the holes of the PN (close to the collector), In order to maintain the equilibrium, the electrons in the collector region accelerate the movement of the outer
collector, while the holes move at the PN junction, which is similar to an avalanche process. The electron of the collector returns to the emitter through the electric
source, which is the working principle of the transistor. When the triode is working, both PN junctions will ince charges,
when the switch is in the on state, the triode is in the saturated state. If the triode is stopped at this time, the charge inced by PN junction will return to the equilibrium state, which takes time. However, the MOS triode works in different ways and has no recovery time, so it can be used as a high-speed switch
in fact, it is wrong to say that the current control is slow and the voltage control is fast. It is necessary to understand the working mode of bipolar transistor and
MOS transistor. The triode works by the movement of the carrier. Taking the emitter follower of NPN transistor as an example, when the base is applied with or without voltage, the PN junction composed of the base and the emitter is to prevent the diffusion movement of the multi carrier (the base is a hole and the emitter is an electron). At this PN junction, the electrostatic field (built-in electric field) from the emitter to the base will be inced, When the base applied positive voltage points to the emission region and the electric field generated by the base applied voltage is greater than the internal
built-up electric field, the carriers (electrons) in the base region can flow from the base region to the emission region. The minimum value of this voltage is the forward conction voltage of PN junction
which is generally considered to be 0.7V in engineering. But at this time, there are charges on both sides of each PN junction. If a positive voltage is applied to the collector emitter, the electrons in the emission region will move to the base region under the action of the electric field (in fact, they all move in the opposite direction of the electrons). Because the width of the base region is very small, the electrons can easily cross the base region and reach the collector region, and compound with the holes of the PN (close to the collector), In order to maintain the equilibrium, the electrons in the collector region accelerate the movement of the outer
collector, while the holes move at the PN junction, which is similar to an avalanche process. The electron of the collector returns to the emitter through the electric
source, which is the working principle of the transistor. When the triode is working, both PN junctions will ince charges,
when the switch is in the on state, the triode is in the saturated state. If the triode is stopped at this time, the charge inced by PN junction will return to the equilibrium state, which takes time. However, the MOS triode works in different ways and has no recovery time, so it can be used as a high-speed switch